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• #6 bryant56 aktív tag tasiadam #5

  Új Válasz 2023-05-02 20:46:45 #6

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  bryant56

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  válasz tasiadam #5 üzenetére

  Ezt én sem tudom. Ezt tudtam összeszedni wiki-ről:
  "GAAFET transistors may make use of high-k/metal gate materials. GAAFETs with up to 7 nanosheets have been demonstrated which allow for improved performance and/or reduced device footprint. The widths of the nanosheets in GAAFETs is controllable which more easily allows for the adjustment of device characteristics.

  GAAFETs are the successor to FinFETs, as they can work at sizes below 7 nm. They were used by IBM to demonstrate 5 nm process technology."

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  Gate-All-Around FET (GAA FET)
  "As the fin width in a finFET approaches 5nm, channel width variations could cause undesirable variability and mobility loss. One promising and futuristic transistor candidate — gate-all-around FET — could circumvent the problem. Considered the ultimate CMOS device in terms of electrostatics, gate-all-around is a device in which a gate is placed on all four sides of the channel. It’s basically a silicon nanowire with a gate going around it. In some cases, the gate-all-around FET could have InGaAs or other III-V materials in the channels."

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