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• #9 SaGaIn senior tag SaGaIn #7

  Új Válasz 2017-04-26 11:54:27 #9

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  SaGaIn

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  válasz SaGaIn #7 üzenetére

  Ez mennyire igaz ?
  

  A 7nm csak a neve a node-nak ? közben inkább 10 feletti lesz?

  Nem úgy az intel 14nm ami valódi 14?
  

  illetve:

  "The numbers floating around the web about TSMC 10nm say:

  0.70 nm Contacted Gate Pitch (x0.78)

  0.46 nm Interconnect Pitch (M1) (x0.72)

  I don't see a full node ahead Intel 14nm, the two processes are neck to neck with a small advantage for TSMC but nothing of dramatic that could change the performance of a SOC in a relevant manner. So apparently Intel is right saying that upcoming TSMC 10nm is a copy of present Intel 14nm.

  Obviously we must to see if real products from TSMC will sport these geometry values or they will are more relaxed to allow better yields and the correct heat dissipation.

  Marketing !!!!

  ps. Samsung 10nm will be more compact than TSMC, a little less than an half node ahead Intel 14nm.

  64nm Contacted Gate Pitch (official value)

  48nm Interconnect Pitch Pitch (M1) (official value)

  I repeat that for sure these are best case values and working silicon is likely a lot more relaxed in sram cells....like it happens in Intel cpus.

  IMO these numbers do not gives an idea of the real silicon shrink of a process shift because manufacturers relax the compactness to avoid the incredible power density of these fine FinFet nodes unable to dissipate heat correctly like a planar process does.
  "

  [ Szerkesztve ]

  "DOS addresses only 1 Megabyte of RAM because we cannot imagine any applications needing more." Microsoft in 1980 "We can" -said Google, than they made Chrome. What happend next is history.

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